Session: WEPB

3:00 PM Wednesday, May 26, 2010

Room: 204ABC
     
Session: WEPB
Frequency Conversion and Control
Chair:
Hiroshi Okazaki, NTT DOCOMO, INC.
Abstract:
High performance microwave doublers and mixers are presented.
 
 
WEPB-1
A 90 nm CMOS 14.5 GHz Injection Locked LO Generator with Digital Phase Control
3:00 PM-5:00 PM
A. Axholt, H. Sjöland, Lund University, Lund, Sweden
(1049)
A 14.5 GHz Injection Locked Oscillator (ILO) with digital output phase control has been implemented in a 90 nm CMOS process. It is intended for LO signal generation in integrated phased array transceivers. The chip, measuring 360x530 μm2 including pads, was characterized using on-wafer probing. It consumes 9.4 mA from a 1.2 V supply and has a 1.4 GHz frequency range where full 3600 phase range is achieved with 3rd order subharmonic mixers. The free running phase noise is -105 dBc/Hz at 1 MHz offset.
 
 
WEPB-2
High Power, High Conversion Gain Frequency Doublers Using SiC MESFETs and AlGaN/GaN HEMTs
3:00 PM-5:00 PM
K. S. Yuk, G. R. Branner, C. Wong, University of California, Davis, United States
(1395)
High power, high conversion gain microwave frequency doublers using wide bandgap semiconductor devices are developed. A method of determining the optimal harmonic terminations using accurate nonlinear computer models and load- and source-pull simulations is described. Synthesis of these impedances using matching and reflector networks have produced doublers with increased output power, conversion gain and very high suppression of the first and third harmonics. A SiC MESFET-based frequency doubler at fo=2.00GHz producing up to 10.00dB conversion gain and 6.31 Watts 2fo output power is presented. An AlGaN/GaN HEMT-based frequency doubler at fo=3.33GHz producing up to 14.80dB conversion gain and 4.14W 2fo output power is also presented. The second harmonic power measurements confirm the accurate predictions made by the nonlinear model.
 
 
WEPB-3
A 22-39 GHz Passive Mixer in SiGe:C Bipolar Technology
3:00 PM-5:00 PM
V. Issakov1, H. Knapp2, M. Wojnowski2, A. Thiede1, W. Simbuerger2, 1University Paderborn, Paderborn, Germany, 2Infineon Technologies AG, Neubiberg, Germany
(1618)
Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon’s B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 - 39 GHz at a low LO power of 3 dBm. The circuit exhibits an input-referred 1dB compression point of -1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.
 
 
WEPB-4
Dynamic Range Reduction Due to RF and Image Signal Co-Existence in a Highly-Merged 2.4/5.7-GHz Dual-Band Low-IF Downconverter
3:00 PM-5:00 PM
J. Syu1, C. Meng1, G. Huang2, 1National Chiao Tung University, Hsinchu, Taiwan, 2National Nano Device Laboratories, Hsinchu, Taiwan
(1722)
A highly-merged 2.4/5.7-GHz dual-band low-IF downconverter is demonstrated using 0.18-m CMOS technology. Weaver and Hartley architectures are utilized to achieve high image-rejection ratio (IRR) of first and second image signals. The first LO (LO1) is set exactly halfway between the two bands. That is, the 2.4/5.7-GHz bands are the first image signal of each other. However, in a real home/commercial environment, a 5.7/2.4-GHz blocking signal is present when the 2.4/5.7-GHz band is desired and thus degrades the dynamic range of the receiver. Therefore, the dynamic range degradation due to the co-existence of RF and image signals is discussed in this paper.
 
 
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