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Session: WE1F8:00 AM Wednesday, May 26, 2010 Room: 208AB |
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Session: WE1F | High Efficiency Power Devices in Various Technologies |
Chair: | Aryeh Platzker, Raytheon Company |
Co-Chair: | Douglas Teeter, RFMD |
Abstract: | This session opens with a record result for a GaN X-band MMIC amplifier with 43W at 52% PAE. The high efficiency potential of GaN devices is the topic of the following two papers which emphasize the transistor requirements for such performance and demonstration of 57% PAE at 4 GHz from a class E MMIC with 4 W output power. The next paper extends the performance of Si LDMOS technology to 6 GHz with a 1 W 40% efficiency amplifier. The session concludes with a novel high efficiency X band push pull inverse class F amplifier. |
| | WE1F-1 | 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers | 8:00 AM-8:20 AM | S. Piotrowicz1, Z. Ouarch2, E. Chartier1, R. Aubry1, G. Callet1, D. Floriot2, J. Jacquet1, O. Jardel1, E. Morvan1, T. Reveyrand3, N. Sarazin1, S. Delage1, 1ALCATEL-THALES III-V Lab, Marcoussis, France, 2United Monolithic Semiconductors, Orsay, France, 3XLIM, Limoges, France |
(1233) | This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Korrigan project launched by the European Defense Agency. GaN has already demonstrated excellent output power levels, nevertheless demonstration of excellent PAE associated to very high power in MMIC technology is still challenging. In this work, we present State-of-the-Art results on AlGaN/GaN MMIC amplifiers. An output power of 43W with 52% of PAE was achieved at 10.5 GHz showing that high power associated with high PAE can be obtained at X-band using MMIC GaN technology. | | |
WE1F-2 | Evaluation of a GaN HEMT Transistor for Load- and Supply-Modulation Applications Using Intrinsic Waveform Measurements | 8:20 AM-8:40 AM | H. Mashad Nemati1, A. L. Clarke2, S. C. Cripps2, J. Benedikt2, P. J. Tasker2, C. Fager1, J. Grahn1, H. Zirath1, 1Chalmers University of Technology, Gothenburg, Sweden, 2Cardiff School of Engineering, Cardiff University, Cardiff, United Kingdom |
(1533) | In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0.9 GHz and investigated for load- and supply-modulation applications. The results show that both techniques perform equally well for back-off levels 6.5 dB. At higher back-off levels, the efficiency improvements achieved by supply modulation outperform load modulation. At 10 dB back-off, supply, and load modulation provide a power-added efficiency (PAE) of 68%, and 58%, respectively. Using measured intrinsic waveforms, it is shown that PAE degradations in load modulation can be mainly attributed to parallel losses rather than series losses, which are dominant in supply modulation. The harmonic contents of the intrinsic waveforms, in both techniques, are equally strong in back-off and peak power operations. There is, therefore, a great potential for further efficiency enhancement by circuit-level optimization of harmonic terminations for back-off. | | |
WE1F-3 | High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology | 8:40 AM-9:00 AM | V. Zomorrodian, Y. Pei, U. K. Mishra, R. A. York, University of California Santa Barbara, Santa Barbara, United States |
(1635) | Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AlGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 x 125 um) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of output power and maximum gain of 14.8 dB. The second circuit used a 1 mm (8 x 125 um) HEMT and at 30 V drain bias it produced 57% PAE, 36 dBm of output power, and maximum gain of 13 dB. The key to obtaining the high gain, PAE and output power produced by these circuits is accurate modeling of the HEMTs and the passive components. | | |
WE1F-4 | A 1 W Si-LDMOS Power Amplifier with 40 % Drain Efficiency for 6 GHz WLAN Applications | 9:00 AM-9:20 AM | D. Gruner1, R. Sorge2, O. Bengtsson3, A. Z. Markos1, G. Boeck1, 1Berlin Institute of Technology, Berlin, Germany, 2IHP GmbH, Frankfurt (Oder), Germany, 3Ferdinand-Braun-Institut, Berlin, Germany |
(1622) | The design and characterization of LDMOS power transistors and amplifiers developed for 6 GHz WLAN applications are presented. Transistors of different size were fabricated in a 0.25 μm SiGe:C BiCMOS technology and have been characterized using a load/source pull measurement system. Based on this characterization a 5.8-5.9 GHz power amplifier was designed, fabricated and tested. By using on-board Wilkinson combiner structures an output power of 1 W at 1 dB power compression was achieved. The measured maximum drain efficiency/PAE were 40/28 % with a small signal gain of 7.2 dB. From the modulated signal evaluation using a 802.11p test signal an ACPR of -38 dBc and an error vector magnitude of 3 % were determined at 1 dB peak power compression. | | |
WE1F-5 | High Efficiency Push-Pull Inverse Class F Power Amplifier Using a Balun and Harmonic Trap Waveform Shaping Network | 9:20 AM-9:40 AM | A. N. Stameroff1, A. V. Pham1, R. E. Leoni III2, 1University of California Davis, Davis, United States, 2Raytheon Company, Andover, United States |
(1819) | We present the design and development of a push-pull inverse class F power amplifier in X band using a novel harmonic matching network. The harmonic matching network is realized by a simple, low-loss, Marchand balun and a harmonic trap circuit. This novel harmonic matching network not only provides 3-dB power combining, but also enables waveform shaping for enhanced efficiency. This 1-stage power amplifier using discrete GaAs pHEMTs achieves a measured saturated output power of 33 dBm with a power added efficiency of 63% and a gain of 10 dB. This amplifier operates at 10 GHz with a 6% fractional bandwidth. | | |
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