 |
Session: TUPA3:00 PM Tuesday, May 25, 2010 Room: 204ABC |
 |
|
| |
Session: TUPA | MEMS Switches |
Chair: | Jim Hwang, Lehigh University |
Abstract: | This session covers recent developments in RF-MEMS. |
| | TUPA-1 | Performance of Temperature-Stable RF MEMS Switched Capacitors under High RF Power Conditions | 3:00 PM-5:00 PM | I. C. Reines1, G. Rebeiz1, B. Pillans2, 1University of California San Diego, La Jolla, United States, 2Raytheon Systems, Dallas, United States |
(1136) | This paper presents a temperature-stable RF MEMS shunt capacitive switch which employs a circular beam geometry. The circular switch reduces the effect of stress changes versus ambient temperature and results in a average pull-in voltage slope of only -55.8 mV/±C from -5-125±C. This novel device is simulated and tested under continuous RF power at 10 GHz. Results show that the non-uniform temperature distribution of the MEMS bridge, due to the RF power absorbtion, leads to a decreasing up-state capacitance and increasing spring constant. This combination results in a switch that does not suffer from selfactuation up to power levels of 5.2 W, limited by the test setup. The RF power handling measurements are in good agreement with simulations. | | |
TUPA-2 | Magnetically-Actuated Dielectric Cantilever RF MEMS Switches | 3:00 PM-5:00 PM | A. A. Fomani, S. Fouladi, R. R. Mansour, University of Waterloo, Waterloo, Canada |
(1700) | Fully integrated novel magnetically-actuated dielectric cantilever MEMS switches suitable for high frequency RF applications are reported. A four-mask fabrication process has been developed to produce the MEMS switches with integrated current coils on both the substrate and the dielectric cantilever. The switches are actuated using an electromagnetic force and held in the DOWN state using an electrostatic force. DC actuation currents around 110 mA have been measured to be sufficient for operating the switch. The beam is maintained at DOWN state with the application of a potential difference as low as 24 V between the coils. In terms of the RF performance, the insertion and return losses are lower than -0.3 dB and -24 dB, respectively; and isolation is higher than 34 dB up to 10 GHz. To enhance the switch reliability, it is feasible to force the device into the UP state using a repulsive electromagnetic force in the case of release failure or stiction. | | |
TUPA-3 | CMOS-based Monitoring of Contact Events up to 4 MHz in Ohmic RF MEMS Switches | 3:00 PM-5:00 PM | A. J. Fruehling, M. Abu Khater, B. Jung, D. Peroulis, Purdue University - Birck Nanotechnology Center, West Lafayette, United States |
(1768) | This paper presents an ultra-low power, fully electronic methodology for real-time monitoring of the contact events of ohmic RF MEMS switches. The measurement is based on a resistive readout circuit composed of 67 transistors with a 105 x 105 micron footprint. This is coupled with a novel implementation of a single crystal silicon switch capable of operating from DC- 40 GHz. The CMOS readout electronics tap the RF circuitry through two 1.6 k resistors that add negligible insertion loss to the switch. Experimental and theoretical results demonstrate that timing information for the switch contact behavior is accurately measured for consecutive bounce events that occur during the time it takes for the switch to come to a fully closed state. This demonstrates the potential of this technique to real-time on-chip dynamic monitoring of contacts for packaged RF MEMS switches through their entire lifetime and after their integration in the final system. | | |
TUPA-4 | Variable Spring Constant, High Contact Force RF MEMS Switch | 3:00 PM-5:00 PM | H. Sedaghat-Pisheh, G. M. Rebeiz, University of California, San Diego (UCSD), San Diego, United States |
(1792) | This paper presents the design, fabrication and measurements on a novel metal-contact RF MEMS switch with variable spring constant and high contact and release forces. The spring constant of the switch dramatically increases when the applied voltage is larger than the threshold voltage (Vt), defined when the tip touches a dielectric block. This design shows a total contact force and restoring force of 0.6 – 1.1 mN and a 0.5 mN, respectively, for an actuation voltage of 75-90 V. The measured switching time is 10 µs. The switch is an excellent candidate for high performance microwave applications requiring high power handling and a large contact force. | | |
If you encounter any problems, please contact |
|
|
| |
|
|
|