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Session: TU4E3:30 PM Tuesday, May 25, 2010 Room: 207C |
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Session: TU4E | Microwave and Millimeter Wave VCOs |
Chair: | John Papapolymerou, Georgia Institute of Technology |
Co-Chair: | Yi-Jan Emery Chen, National Taiwan University |
Abstract: | From HF to millimeter wave, VCOs continue to be a major focal point for microwave systems. This session presents the latest advancements in the art of high performance VCO design with various configurations covering the gamut from Si to III-V technologies. |
| | TU4E-1 | ≥300GHz Fixed-Frequency and Voltage-Controlled Fundamental Oscillators in an InP DHBT Process | 3:30 PM-3:50 PM | M. Seo1, M. Urteaga1, A. Young1, V. Jain2, Z. Griffith1, J. Hacker1, P. Rowell1, R. Pierson1, M. Rodwell2, 1Teledyne Scientific & Imaging, Thousand Oaks, United States, 2University of California, Santa Barbara, Santa Barbara, United States |
(1707) | We report fundamental fixed-frequency and voltage-controlled oscillators operating at 300GHz fabricated in a 256nm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology followed by a common-base buffer. Measured oscillation frequencies of fixed-frequency designs are 267.4, 286.8, 310.2, and 346.2GHz, at PDC=35mW. At optimum bias, the output power was measured to be -5.1, -6.9, -9.2, and -11.0 dBm for each design (no probe loss correction), with PDC≤115mW. Measured phase noise was -96.6dBc/Hz at 10MHz offset. Varactor-tuned designs demonstrated 10.6-12.3 GHz of tuning bandwidth bandwidth. | | |
TU4E-2 | Oscillator Phase-Noise Reduction Using Low-Noise High-Q Active Resonators | 3:50 PM-4:10 PM | M. Nick, A. Mortazawi, University of Michigan, Ann Arbor, United States |
(1739) | This paper describes a method for the design of a low phase-noise planar oscillator based on a compact low-noise active elliptic filter for its frequency stabilization. The phase-noise of the oscillator is significantly reduced by taking advantage of the high frequency-selectivity and low-noise characteristics of the active filter. The filter occupies a relatively small area due to its two-pole dual-mode structure, making it suitable for the fabrication of very compact low phase-noise oscillators. As a proof of concept, a X-band oscillator using a packaged SiGe HBT transistor is designed and tested. The oscillator, operating at 8.1 GHz, achieves a measured phase-noise of -150 dBc/Hz at 1 MHz frequency offset with 10 dBm output power. To the best of our knowledge, the oscillator demonstrated in this paper presents the lowest phase-noise among published planar oscillators, to date | | |
TU4E-3 | Low Phase Noise Load Independent Switched LC VCO | 4:10 PM-4:30 PM | P. Liu1, P. Upadhyaya2, J. Jung1, T. Luo3, Y. Chen3, D. Heo1, 1Washington State University, Pullman, United States, 2Xilinx Inc., San Jose, United States, 3National Taiwan University, Taipei, Taiwan |
(1793) | This paper presents a novel low-voltage low phase noise CMOS complementary LC Voltage Controlled Oscillator(VCO) implemented in the TSMC 0.18um CMOS process. By using capacitive feedback, dynamic switching is achieved for the current source. Detailed theoretical analysis is conducted to show, besides load independence, how tail current switching helps reduce supply voltage and improve phase noise performance by reducing drain current duty cycle for less noise up-conversion and reducing 1/f noise without adding switching bias circuits. For the proposed VCO, with 1.2V supply voltage and 2.5mA DC current consumption, phase noise of -121.3dBc/Hz at 1MHz offset from 5.4GHz oscillation frequency is achieved, and the measured FOM is -191.1dBc/Hz. | | |
TU4E-4 | A C-Band GaAs-pHEMT MMIC Low Phase Noise VCO for Space Applications Using a New Cyclostationary Nonlinear Noise Model | 4:30 PM-4:50 PM | C. Florian1, P. A. Traverso1, M. Feudale2, F. Filicori1, 1University of Bologna, Bologna, Italy, 2Thales Alenia Space Italia, Roma, Italy |
(1159) | This paper describes the design of a C-band MMIC VCO for space applications. It exploits a single device with a microstrip resonator coupled with varactors. The technology is a space-qualified GaAs 0.25-um pHEMT process. The MMIC exhibits 350-MHz bandwidth at 7.3 GHz, with 14 dBm output power and -86 dBc/Hz single side-band phase noise (PN) at 100 kHz from the carrier. Performances are in good agreement with simulations. The active device was characterized in terms of low-frequency noise in quiescent operation and its up-conversion into PN under large-signal RF oscillating conditions, using in-house developed measurement setups. A new compact nonlinear noise model was identified and exploited for PN simulations. The model features cyclostationary equivalent noise generators. Comparisons between measurements and simulations show that the nonlinear cyclostationary modeling approach is more accurate rather than conventional noise models in oscillator PN analyses of pHEMT circuits | | |
TU4E-5 | A Millimeter-Wave Reflection-Type Dual-Frequency VCO MMIC with a Coupled Line | 4:50 PM-5:10 PM | H. Mizutani, K. Nishida, M. Tsuru, K. Kawakami, M. Hieda, E. Taniguchi, M. Shimozawa, Y. Hirano, Mitsubishi Electric Corporation, Kamakura, Japan |
(1337) | This paper presents a millimeter-wave dual-frequency voltage controlled oscillator (VCO), which enables to provide the fundamental and the second harmonic signals from its different ports without frequency multiplier and power divider. In order to provide the fundamental signals, a coupled line is applied instead of a transmission line between the transistor and the resonator in the conventional reflection-type second harmonic VCO. A coupling factor of the coupled line is the design parameter to decide the fundamental and the second harmonic output power, and phase noise. The fabricated 36 and 72 GHz-band dual-frequency VCO MMIC employing InGaP/GaAs HBT process exhibits the output power of -2.9 to -1.0 dBm at 36 GHz-band, and -10.6 to -10.0 dBm at 72 GHz-band, and the phase noise of -108 dBc/Hz at 1 MHz offset from the carrier at 36 GHz-band. | | |
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