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Session: THPN3:00 PM Thursday, May 27, 2010 Room: 204ABC |
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Session: THPN | Nonlinear Circuit and System Symulation |
Chair: | Almudena Suarez, University of Cantabria |
| | THPN-1 | Modeling Band-Pass Sampling Receivers Nonlinear Behavior in Different Nyquist Zones | 3:00 PM-5:00 PM | P. M. Cruz, N. B. Carvalho, IT Universidade de Aveiro, Aveiro, Portugal |
(1164) | This paper presents a comprehensive behavioral model of a band-pass sampling receiver working throughout its input bandwidth. The key component of such architecture is the analog-to-digital converter, ADC, in which its input spectrum is normally divided in different Nyquist zones. Such a topology is appointed to be part of future demanding radio receivers for cognitive radio applications and spectrum sensing. An efficient model parameter extraction procedure will be addressed in order to obtain the required parameters for the proposed model when in presence of a huge amount of noise. Furthermore, the presented behavioral model will be validated using real modulated signal excitations applied in different Nyquist zones of the used band-pass sampling receiver. | | |
THPN-2 | Behavioral Model Analysis of Active Harmonic Load-pull Measurements | 3:00 PM-5:00 PM | S. P. Woodington1, R. S. Saini1, D. Willams2, J. Lees1, J. Benedikt1, P. J. Tasker1, 1Cardiff University, Cardiff, United Kingdom, 2Mimix Broadband, Belfast, United Kingdom |
(1668) | This paper outlines the formulation of a mixing based behavioral model, capable of capturing the nonlinear response of microwave transistors to fundamental and harmonic load pull effects for use in Computer Aided Design tools. The key to the model formulation was the experimental identification of the dominating mixing terms. The model is able to accurately compute the voltage and current waveforms present at a Transistors Terminals. The formulation lends itself to economical use of measured data, reducing data storage required within the CAD environment. In this paper the modeling approach has been demonstrated on a 10x75μm GaAs HEMT operating at 9 GHz. | | |
THPN-3 | A Dual Branch Hammerstein-Wiener Architecture for Behavior Modeling of Wideband RF Transmitters | 3:00 PM-5:00 PM | F. Taringou, O. Hammi, F. M. Ghannouchi, University of Calgary, Calgary, Canada |
(1807) | This paper proposes a dual branch Hammerstein-Wiener system suitable for behavioral modeling of dynamic nonlinear RF power amplifiers and transmitters. The model consists of a Hammerstein system in parallel with a Wiener system. The model performances in time and frequency domains are experimentally evaluated for a 3G high power Doherty amplifier driven by multi-carrier WCDMA signals. For various orders, the proposed dual branch Hammerstein-Wiener model performances are benchmarked against those of the Hammerstein model, Wiener model, and the well established memory polynomial model. The proposed dual branch model achieves better performance than single branch Wiener and Hammerstein models with higher number of coefficients. Furthermore, it leads to normalized mean square error performance comparable to that of the memory polynomial model while requiring 30% to 40% less coefficients. | | |
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