 |
Session: THPM3:00 PM Thursday, May 27, 2010 Room: 204ABC |
 |
|
| |
Session: THPM | Device Modeling and Characterization |
Chair: | Peter Asbeck, University of California, San Diego |
| | THPM-1 | Improved Parameter Extraction Method for GaN HEMT on Si Substrate | 3:00 PM-5:00 PM | A. Jarndal1, A. Z. Markos2, G. Kompa3, 1Hodeidah University, Hodeidah, Yemen, 2Berlin University of Technology, Berlin, Germany, 3University of Kassel, Kassel, Germany |
(1020) | An improved parasitic elements extraction method applied to GaN on Si devices is presented. Genetic-algorithm based procedure is used to determine a high quality reliable starting values for the extrinsic parameters of proposed small-signal model. Local optimization technique is then used to refine the initial value and find the optimal value for each model element. The validity of the developed method and the proposed small-signal model is verified by comparing simulated small-signal S-parameters with measured ones of a 2-mm (10x200 µm) GaN HEMT-on-Si. | | |
THPM-2 | Thermal Resistance Modeling for the Electrothermal Layout of High-Power RF Transistors | 3:00 PM-5:00 PM | P. H. Aaen, J. Wood, Q. Li, E. Mares, Freescale Semiconductor Inc., Tempe, United States |
(1378) | This paper demonstrates a practical approach to developing a geometrically scalable thermal resistance model to optimize layout for improved electrical performance of high-power RF transistors. The model is developed using finite element-based simulations, which show very good agreement with measured results. The proposed modeling methodology precomputes simulations over all possible layout considerations and the individual elements of the thermal resistance matrices are automatically approximated by thin-plate splines. This approach produces a model for use within a circuit simulator with virtually no overhead. We are able to scale the model up to 60 mm with less than than 2% error in the maximum predicted temperature rise. | | |
THPM-3 | Nonlinear HEMT Model Direct Formulated From the Second-Order Derivative of the I-V/ Q-V Characteristics | 3:00 PM-5:00 PM | L. Liu1, J. Ma2, H. Wu1, G. Ng3, Q. Zhang4, 1University of Electronic Science and Technology of China, Chengdu, China, 2Tianjin University, Tianjin, China, 3Nanyang Technological University, Singapore, Singapore, 4Carleton University, Ottawa, Canada |
(1689) | In this paper, an empirical nonlinear model for high electron mobility transistors (HEMTs) is presented. Unlike the conventional large-signal models whose fitting parameters are coupled to the measured I-V and C-V characteristics, the proposed modeling equations are direct formulated from the second-order derivative of drain current (I-V) and gate charge (Q-V) with respect to gate voltage. As a consequence, the proposed large-signal model is kept continuously differentiable and accurate enough to the higher-order I-V and Q-V derivatives. Measured and modeled results are compared for the 0.25μm gate-length GaAs pseudomorphic HEMTs (pHEMTs), and good agreement is obtained. | | |
THPM-4 | Nonlinear Characterization Techniques for Improving Accuracy of GaN HEMT Model Predictions in RF Power Amplifiers | 3:00 PM-5:00 PM | R. Marante1, J. A. Garcia1, L. Cabria1, T. Aballo1, P. Cabral2, J. C. Pedro2, 1Universidad de Cantabria, Santander, Spain, 2Universidade de Aveiro, Aveiro, Portugal |
(1711) | In this paper, two vector nonlinear characterization procedures are presented, aimed at improving available GaN HEMT models for an accurate reproduction of the device behavior operating as a current source and in switched-mode RF power amplifiers. In the case of the more traditional linear amplifying classes, a technique for simultaneously extracting the higher order derivatives of the Ids(Vgs), Igs(Vgs) and Cgs(Vgs) transistor nonlinearities, along a desired load line, is described. This procedure conveniently isolates and models their contributions to the device intermodulation distortion (IMD) behavior. In the case of highly efficient switched-mode PAs, employed under drain modulation condition, a modified procedure for isodynamically measuring the higher order derivatives of the Vdd-to-AM and Vdd-to-PM amplifier profiles is put into consideration, as a way to refine the triode region reproduction for ON-OFF operation. | | |
If you encounter any problems, please contact |
|
|
| |
|
|
|