2010 IEEE MTT-S International Microwave Symposium Technical Program

Session: TH3E	The Impact of Nanoelectronics on Radio Frequency Technology
Chair:	Peter Russer, Technische Universitaet Munenchen
Co-Chair:	Lucia Pierantoni, Universita Ploitecnica delle Marche
Abstract:	For future electronics devices, circuits and systems using information and communication technologies, nanotechnologies will provide excellent potentialities. The future development of systems using information and communication technologies, will be characterized by substantially increasing the amounts of data to be stored, processed and transmitted. The evolution of devices following Moore's Law will be possible only on the basis of nanoelectronic concepts. The goal of this focused session is to present an overview of recent development of new microwave materials, devices and system based on nanotechnology.

TH3E-1	Semiconductor Nanomaterials For Radio Frequency Devices and Systems
1:20 PM-1:40 PM	J. A. Rogers, University of Illinois, Urbana, United States
(1859)	The excellent electronic, thermal and mechanical properties of semiconductor nanomaterials, ranging form singlewalled carbon nanotubes (SWNTs) to GaAs nanomembranes and nanowires, together with the ability to integrate them onto a wide range of substrate types, create opportunities for their use in various areas of electronics, ranging from heterogeneously integrated systems for applications in communications to large area distributed circuits for flexible displays. Organized assemblies of these materials can provide effective thin film type semiconductors for scalable circuit integration. This talk highlights (1) methods for self-aligned growth of large scale, perfectly aligned arrays of perfectly linear SWNTs, (2) strategies to create and manipulate nanomembranes and nanowires of GaAs, and (3)device and circuit implementations, including high mobility transistors with GHz switching speeds, transistor radios and medium-scale digital logic circuits on flexible plastic substrates.

TH3E-2	Molecular electronics on its way to RF
1:40 PM-2:00 PM	E. Albert, C. Erlen, S. Locci, P. Lugli, Technische Universitaet Muenchen, Munich, Germany
(1664)	Molecular devices have lately attracted increasing attention due to some appealing features such as their low production cost, flexibility in the substrate choice, possibility of large area deployment, and possibly higher integration capabilities. While it has been commonly thought that such devices could only display poor frequency performance, recent results have indicated that RF applications are possible. Starting from a series of simulation results obtained from our groups, we will illustrate some of the most promising candidates in the novel field of RF molecular electronics.

TH3E-3	Nanostructure Antennas for the LW-IR Regime
2:00 PM-2:20 PM	W. Porod, J. A. Bean, Z. Sun, B. Tiwari, G. Szakmany, G. H. Bernstein, P. Fay, University of Notre Dame, Notre Dame, United States
(1656)	We review our previous work demonstrating planar dipole antenna structures which operate in the LW-IR regime (30 THz). Integrated metal-oxide-metal tunnel diodes are used as the rectifying element. These nanoantenna structures exhibit a polarization and length dependence expected from classical dipole antennas. We measure specific detectivities of 2*106 cmHz1/2W-1. One way of increasing the detectivity of these antenna structures, which currently are fabricated on top of a silicon-silicon dioxide structure, is to place them on top of a cavity filled with a low-k dielectric to achieve higher antenna gain. We have explored the performance of cavity-backed dipoles for LW-IR operation by numerical simulations, and have experimentally verified the performance of these structures with a 1000-x scale model operating in Ka-band (30 GHz).

TH3E-4	Recent Advances in Micro-structured Electric and Nano-structured Magnetic Microwave Metamaterials
2:20 PM-2:40 PM	C. Caloz, L. Carignan, V. Boucher, T. Kodera, S. Couture, A. Parsa, D. Ménard, A. Yelon, École Polytechnique de Montréal, Montréal, Canada
(1278)	Some recent advances in wire-type micro-structured electric metamaterials and nano-structured magnetic metamaterials are presented. It is shown that both exhibit rich macroscopic properties leading to novel microwave concepts and devices. The micro and nano scales may be combined in multi-scale metamaterials with unprecedented functionalities.

TH3E-5	All-semiconducting nanotube devices for RF and microwave applications
2:40 PM-3:00 PM	N. Rouhi, D. Jain, K. Zand, P. J. Burke, UC Irvine, Irvine, United States
(1789)	Purified, all-semiconducting nanotubes offer great promise for a variety of applications in RF and microwave electronics. In this work, we present device performance of thin-film transistors fabricated using a spin-coating method that is economical and lends itself to mass manufacturing of nanotube electronics.

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