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Session: TH3C1:20 PM Thursday, May 27, 2010 Room: 207AB |
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Session: TH3C | Tunable, active and integrated filter technologies |
Chair: | Har Dayal, BAE SYSTEMS -EWS |
Co-Chair: | Atsushi Sanada, Yamaguchi University |
Abstract: | In this session, electronically tunable, active, and integrated filters utilizing Si, GaAs, and glass substrates for ultra-wideband (UWB), WiMAX, and UHF applications applying MMIC, integrated passive device (IPD) and superconducting technology papers will be presented. |
| | TH3C-1 | Novel MMIC Architectures for Tunable Microwave Wideband Active Filters | 1:20 PM-1:40 PM | F. Bergeras1, P. Duême2, J. Plaze2, L. Darcel3, B. Jarry1, M. Campovecchio1, 1XLIM Research Institute, Limoges, France, 2Thales Airborne Systems, Elancourt, France, 3Thales Air Systems, Elancourt, France |
(1327) | This paper reports on two novel architectures for designing tunable microwave active bandpass filters in MMIC technology. The 1st MMIC concerns a frequency-tunable active bandpass filter based on the principle of "actively-coupled passive resonators". Starting from a specific synthesis method developed for fixed-frequency high-order filters, the frequency tuning ability is now performed by the use of varactor-diodes. This new feature is illustrated by the design of a tunable 3-pole active bandpass filter centered at 12 GHz on GaAs. The 2nd MMIC implements a frequency-selective wideband active bandpass filter with the ability to select the required band. This feature is achieved by the use of a channelized configuration. To demonstrate this ability, a GaAs chip has been designed using 3 active filtering channels, embedded in a distributed topology to perform a 3-pole bandpass response in the [9-15] GHz range. | | |
TH3C-2 | Three Approaches for the realization of a Chebyshev Cross-Coupled UWB Filter | 1:40 PM-1:50 PM | W. Galal El Dine1, H. Ezzeddine1, S. Bila2, S. Verdeyme2, 1STMicroelectronics, Tours, France, 2XLIM - UMR CNRS n°6172, Limoges, France |
(1228) | This paper deals with the synthesis and realization of a UWB filter in the [3.168, 4.752] GHz band using a thin film IPD technology and a 4th order Chebyshev cross-coupled architecture that allows us to introduce two finite transmission zeroes out of band. In order to realize this filter, three approaches of realization were considered. The first approach was a classical use of the available technology, i.e. lumped elements. The second was the introduction of distributed capacitors to reduce the filter response sensitivity towards the industrial process variation. The last, dictated by size issues, consisted in using electromagnetic coupling in order to suppress a lumped inductor from the circuit. The three versions are described and results are discussed. | | |
TH3C-3 | High Rejection BPF for WiMAX Applications from Silicon Integrated Passive Device Technology | 1:50 PM-2:00 PM | K. Liu1, R. C. Frye2, B. Ahn1, 1STATS ChipPAC, Tempe, United States, 2RF Design Consulting, LLC, Piscataway, United States |
(1554) | Abstract — We have developed a balanced band-pass filter using Silicon Integrated Passive Device (IPD) technology. The size of the filter is 2.0 x 1.3 x 0.4 mm3, which is by far the smallest filter achieving similar characteristics, to the best of our knowledge. A hybrid EM-circuit optimization scheme has been adopted for the design. Prototypes are made and measured. Good agreement has been achieved be-tween simulated results and probed data. The measured insertion loss is 2.3 dB, the attenuation at 2.1 GHz is 24 dB minimum, and the attenuations at 2nd and 3rd harmonics are better than 35 dB. This small form-factor WiMAX filter is well suited for SiP appli-cations to replace discrete filters, or to save large areas used to implement such filtering functions on boards. | | |
TH3C-4 | Single-Chip Integration of Electronically Switchable Bandpass Filter for 3.5GHz WiMAX Application | 2:00 PM-2:10 PM | W. Liao, C. Chen, Y. Lin, National Central University, Jhongli City, Taoyuan County, Taiwan |
(1311) | This paper demonstrates the design and implementation of a miniaturized bandpass filter integrated with switch function in commercial GaAs pHEMT process for 3.5GHz WiMAX application. A tapped-input, capacitive-loaded hairpin-comb bandpass filter is proposed to benefit from the high-density metal-insulator-metal capacitor in the GaAs process, such that the required electrical length of coupled-line is only 13.3 degree at the center frequency and the filter size can be largely reduced. The proposed integrated bandpass filter features low in-band insertion loss as well as a wide 30-dB rejection-band up to 33.8 GHz. The filter size is 1.22 mm×0.61 mm. Then, adding two D-mode FETs in pHEMT process, the filter can be switched on and off electronically. Low-loss bandpass response with wide rejection band in “filter on” state and wideband 35-dB isolation from DC up to 28.7 GHz in “filter off” state are achieved. The chip size of this switchable bandpass filter is only 2.0 mm×1.0 mm. | | |
TH3C-5 | Very Compact Transformer-Coupled Balun-Integrated Bandpass Filter Using Integrated Passive Device Technology on Glass Substrate | 2:10 PM-2:20 PM | C. Chen1, C. Huang1, T. Horng1, S. Wu2, C. Chiu3, C. Hung3, J. Li4, C. Chen4, 1National Sun Yat-Sen University, Kaohsiung, Taiwan, 2National University of Kaohsiung, Kaohsiung, Taiwan, 3Advanced Semiconductor Engineering Inc., Kaohsiung, Taiwan, 4Industrial Technology and Research Institute, Hsinchu, Taiwan |
(1429) | This paper presents a transformer-coupled resonator structure to integrate a balun into a bandpass filter using integrated passive device technology on glass substrate. The use of the transformer not only greatly reduces the size of the bandpass filter, but also easily provides the coupling to the balanced output ports. In addition, the tapped feed-lines are used to obtain a good impedance match at all ports, and create extra transmission zeros to enhance the desired stopband rejection. The presented balun-integrated bandpass filter has an overall smaller area and lower insertion loss than the separate designs, showing a great potential to be embedded in a glass carrier for wireless 3D packaging and integration. | | |
TH3C-6 | Low Temperature Superconductive Tunable Bandstop Resonator and Filter | 2:20 PM-2:30 PM | S. S. Attar, S. Setoodeh, R. R. Mansour, University of Waterloo, Waterloo, Canada |
(1735) | A superconducting MEMS varactor is reported. The device is fabricated using a standard Niobium superconductor foundry process. Utilizing this varactor a superconducting tunable notch resonator is implemented. The tunable resonator has a measured tunability of more than 20% from 3.22 GHz to 2.54 GHz with a biasing voltage from 0 V to 78 V. A 3-pole bandstop filter is also fabricated and tested. Simulation results of the tunable bandstop filter demonstrates a 20% shift in center frequency. | | |
TH3C-7 | A Vertically Integrated Tunable UHF Filter | 2:30 PM-2:50 PM | E. E. Hoppenjans, W. J. Chappell, Purdue University, West Lafayette, United States |
(1829) | A novel, vertically integrated filter design is used to produce a tunable UHF filter in a polymer based substrate. The filter is a sub band of a widely tunable narrowband preselect filter array and makes use of unused substrate space within the array to increase the overall tuning range of the array while keeping the substrate volume constant. This paper will discuss the use of mixed three dimensional electromagnetic and SPICE simulation in the design of the tunable filter. The fabrication of the filter using standard PCB fabrication techniques will be described and measured performance of the filter will be compared to the simulated response. The design and simulation of vertically integrated coupled parallel plate inductors and the careful design of the combination of static capacitors and tuning varactors to acheive the desired tuning and filter response will be highlighted. | | |
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