Session: TH3A

1:20 PM Thursday, May 27, 2010

Room: 205AB
     
Session: TH3A
Advances in Silicon-based Millimeter-Wave Integrated Circuits
Chair:
Dietmar Kissinger, University of Erlangan-Nuermberg
Co-Chair:
Robert Weigel, University of Erlangan-Nuermberg
Abstract:
The advancement of silicon-based technologies like CMOS and SiGe has enabled low cost fabrication of fully integrated millimeter-wave transceivers for consumer applications and sensor technologies. Current research of silicon technology is targeting transition frequencies of 500 GHz, which will enable integration of systems with operational frequencies well above 100 GHz, paving the way towards monolithic electronic THz solutions. This session focuses on recent advancements in millimeter-wave circuits based on silicon technologies for emerging technologies for emerging technologies around 100 GHz and beyond.
 
 
TH3A-1
On the Development of CMOS Sub-THz Phased Array Technology for Communication/Sensing Nodes
1:20 PM-1:30 PM
J. Laskar, S. Pinel, S. Sarkar, P. Sen, B. Perunama, D. Dawn, M. Leung, F. Barale, D. Yeh, S. Shin, S. W. Hsiao, K. Chuang, E. Juntunen, G. Iyer, A. Muppalla, P. Melet, Georgia Tech, Atlanta, United States
(1281)
In this paper, we present a single chip cross-layer approach for a new class of highly integrated CMOS millimeter wave and sub-THz communication and sensing wireless systems. It is based on the convergence of fully integrated CMOS digital radio and beam former, low power multi-gigabit mixed-signal processing and low cost packaging with embedded antenna. A 60GHz CMOS/PCB portable beam-former solution and highly scalable V-band CMOS 45nm architecture are highlighted as leading edge examples of such an approach, enabling breakthrough power/size reduction and multi-gigahertz bandwidth and processing speeds. These single chip millimeter wave and sub-THz system-on-chip solutions are the fundamental enablers for a wide range of communication and sensing applications operating from V-band to W-band and beyond.
 
 
TH3A-2
A 76GHz PLL for mm-Wave Imaging Applications
1:30 PM-1:40 PM
K. M. Nguyen1, H. Kim2, C. G. Sodini1, 1Massachusetts Institute of Technology, Cambridge, United States, 2Lincoln Laboratory, Lexington, United States
(1571)
A 76GHz phase-locked loop (PLL) was designed in 0.13um IBM BiCMOS8HP technology with the intended application of millimeter-wave imaging. The PLL has a type II second order loop filter. The voltage-controlled oscillator (VCO) uses a cross-coupled BJT topology with capacitor feedback. The divider chain has nine divide-by-2 static frequency dividers in which the first seven use ECL logic and are followed by two CMOS stages. Measurement results show a de-embedded single-ended output power of -2dBm, a phase noise of -81dBc/Hz at 1MHz offset from the carrier, and a total power dissipation of 107mW.
 
 
TH3A-3
Towards High-Performance 100 GHz SiGe and CMOS Circuits
1:40 PM-2:00 PM
G. M. Rebeiz1, J. W. May1, M. Uzunkol1, W. Shin1, O. Inac1, M. Chang2, 1University of California, San Diego, La Jolla, United States, 2University of Michigan, Ann Arbor, Ann Arbor, United States
(1808)
This paper presents SiGe and CMOS circuits with 100 GHz operation. The goal is to show that SiGe can be used for imaging systems due to its low 1/f noise properties. A W-band SiGe imaging chip is presented with performance which is nearly as good as the best InP chips. Another goal is to show that deep-scaled CMOS can result in high performance amplifiers, detectors, and doublers at 90-110 GHz and at 180-220 GHz. The applications areas are in high data-rate communications, 100 GHz automotive radars (140 and 220 GHz) and mm-wave imaging systems.
 
 
TH3A-4
Highly Integrated 79, 94, and 120-GHz SiGe Radar Frontends
2:00 PM-2:20 PM
M. Jahn, A. Stelzer, A. Hamidipour, Johannes Kepler University of Linz, Linz, Austria
(1239)
This paper reflects on design aspects for multi-channel frequency-continuous (FMCW) wave radar frontends from conception to application on board. In the 79-GHz domain, multi-channel applications are recapitulated, and in the 94-GHz domain, a broadband transceiver is presented along with a voltage-controlled oscillator (VCO) that covers a tuning range of 12 GHz. The functionality of the 94-GHz chipset was verified by means of a four-channel multiple-input multiple-output (MIMO) radar prototype. Finally, a highly integrated 120-GHz transceiver with on-chip signal generation is presented.
 
 
TH3A-5
Second Generation Transceivers for D-Band Radar and Data Communication Applications
2:20 PM-2:40 PM
I. Sarkas1, E. Laskin1, J. Hasch2, P. Chevalier3, S. P. Voinigescu1, 1University of Toronto, Toronto, Canada, 2Robert Bosch GmbH, Stuttgart, Germany, 3STMicroelectronics, Crolles, France
(1251)
A single chip, dual-functionality radio and FMCW radar transceiver, operating at 140 GHz is described. Doppler, loop-back and 4Gb/s NLOS radio link demos, over the air and distances exceeding one meter, are demonstrated. The second part of the paper presents novel, sub-1.8 V circuit topologies intended for a low power, high resolution 120 GHz radar transceiver with self-calibration capabilities. The measured receiver noise figure, gain and phase noise are 7.5 dB, 20 dB and -100 dBc/Hz@1MHz offset respectively.
 
 
TH3A-6
122 GHz ISM-Band Transceiver Concept and Silicon ICs for Low-Cost Receiver in SiGe BiCMOS
2:40 PM-3:00 PM
K. Schmalz1, W. Winkler2, J. Borngräber1, W. Debski2, B. Heinemann1, J. C. Scheytt1, 1IHP GmbH, Frankfurt (Oder), Germany, 2Silicon Radar GmbH, Frankfurt (Oder), Germany
(1212)
A subharmonic transceiver for sensing and imaging applications in the 122 GHz ISM band has been proposed. The receiver consists of a single-ended LNA, a push-push VCO with 1/32 divider, a polyphase filter, and a subharmonic mixer. The receiver is fabricated in SiGe:C BiCMOS technology with fT/fmax of 255GHz/315GHz. Its differential down-conversion gain is 31 dB at 122 GHz, and the corresponding noise figure is 11 dB. The 3-dB bandwidth reaches from 121 GHz to 124 GHz. The input 1-dB compression point is at -44 dBm. The receiver consumes 113 mA at a supply voltage of 3.2 V.
 
 
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