2010 IEEE MTT-S International Microwave Symposium Technical Program

Session: TH1E	Advances in Active Device Modeling
Chair:	Arvind Sharma, Northrop Grumman
Co-Chair:	Q.J. Zhang, Carleton University
Abstract:	First-pass design of microwave and millimeter-wave circuits requires that device models accurately describe the device under various operating environments. There has been considerable progress in the test equipment and measurement proedures, as well as in characterization and modeling techniques. Several new compound semiconductor technologies have also emerged to address demanding system application requirements. Modeling complex device behavior requires innovative approaches. In this focused session, presenters will report on the status of linear, noise, and nonlinear models; and address future directions in the measurement approaches and modeling techniques.

TH1E-1	Nonlinear Modeling of Compound Semiconductor HEMTs, State of the Art
8:00 AM-8:20 AM	W. R. Curtice, W. R. Curtice Consulting, Washington Crossing, United States
(1133)	This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications.

TH1E-2	Empirical Modeling of GaN FETs for Nonlinear Microwave Circuit Applications
8:20 AM-8:40 AM	A. Santarelli, V. Di Giacomo, Univ. of Bologna, Bologna, Italy
(1218)	A new approach for the electro-thermal modeling of GaN FETs is presented. The model is identified on-wafer through static I/V curves measured at different base plate temperatures and small-signal parameters. Improvements in the prediction of the dc drain current component under large-signal operation can be obtained by taking into account nonlinear dynamics of charge trapping phenomena. The use of measured pulsed-I/V characteristics is avoided in the model extraction phase. Identification procedures and a wide experimental validation for a 0.25 um AlGaN/GaN HEMT on SiC with 600 um periphery are provided in the paper.

TH1E-3	Strategies for addressing linearity Issues in Active Device Modeling
8:40 AM-9:00 AM	A. Mediavilla, J. A. Garcia, L. Cabria, F. R. Marante, Univ. of Cantabria, Santander, Spain
(1539)	Microwave active-circuit design at the semiconductor level has been proposed as a real alternative for addressing the linearity versus efficiency trade-off in wireless applications, mainly when the use of traditional system-level architectures may be prohibitive due to cost or complexity. A wide set of techniques are available from the control of the transistor physics to device-based implementations of system concepts. This presentation will firstly discuss on what are the necessary measurements and model strategies to build a semiconductor model able to predict intermodulation distortion behavior. Furthermore, attention will be focused on the selection of optimum operating conditions, the adaptation of bias and load to the input signal envelope, and the use of auxiliary devices for creating an approximated compound linear transistor. Finally, the integration of these semiconductor-based approaches in printed radiators and arrays will also be considered.

TH1E-4	Compact HBT modeling: status and challenges
9:00 AM-9:20 AM	M. Rudolph, Brandenburg University of Technology, Cottbus, Germany
(1325)	HBTs show much better performance compared to their BJT predecessors, but also require enhanced models for reliable circuit design. This talk addresses which enhancements are required and available in state-of-the-art models, namely, accounting for self-heating and bias-dependence of transit-time. Limitations of these models, and thus challenges for future modeling efforts, will also be addressed, like: modeling of large and packaged devices, noise modeling, operation in deep saturation, and operation at and beyond transit frequency.

TH1E-5	State-of-Art, Challenges and Future Directions in Large Signal Measurements for Active Device Modeling
9:20 AM-9:40 AM	D. Schreurs, K.U.Leuven, Leuven, Belgium
(1097)	Vector non-linear measurements emerged two decades ago, initiating a vast range of novel applications in microwave characterisation, modeling, and design. This paper focuses on its impact on microwave active device modeling. After sketching the evolution in instrumentation, the present capabilities are described. Today’s developments are happening swiftly and on a large scale. As communication becomes more low-power, more wireless, and more bandwidth demanding, requirements for device models have evolved as well. In this paper, the present challenges in modeling and thus directions in instrumentation development are discussed.

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