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Session: P39:40 AM Friday, December 12, 2008 Room: Red Lion |
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Session: P3 | Poster Session 3 - Calibration and Power Measurement |
Chair: | Evan Fledell, Intel Corporation |
| | P3-1 | Comparison of On-Wafer Multiline TRL and LRM+ Calibrations for RF CMOS Applications | 9:40 AM-10:40 AM | A. Rumiantsev1, S. L. Sweeney2, P. L. Corson2, 1SUSS MicroTec Test Systems GmbH, Sacka, Germany, 2IBM Microelectronics, Essex Junction, United States |
(35) | This paper presents a quantitative comparison of the reference multiline TRL and LRM+ for a customized set of standards in a CMOS process using IBM’s 0.13 μm technology. This comparison was undertaken for the first time and covered a frequency range from 1 to 110 GHz. It was demonstrated that the accuracy of the on-wafer multiline TRL and LRM+ calibration were in very good agreement. Both methods outperform the conventional off-wafer calibration with the DUT contact pad parasitics de-embedded | | |
P3-2 | A General Closed-Form Solution to Multi-Port Scattering Parameter Calculations | 9:40 AM-10:40 AM | P. Wittwer2, P. J. Pupalaikis1, 1LeCroy Corporation, Chestnut Ridge, United States, 2University of Geneva, Geneva, Switzerland |
(39) | Measurements using error terms to describe the imperfections of test equipment have been used for a long time, and there are many methods utilized to model the error terms. In all these methods, after having determined the error terms on the basis of calibration measurements, the s-parameters of the device-under-test (DUT) are computed from the measured s-parameters by an appropriate algorithm. One problem that arises in this context is that the methods used for calculating the s-parameters, while widely known for the one- and two-port case, appear not to be generally available for the multi-port situation. This paper address this question by deriving a simple method which allows for calculating the s-parameters of a multi-port DUT from the measured s-parameters using the error terms obtained in the calibration step. The method generates exact, closed-form solutions, and is applicable to all error models in use today. | | |
P3-3 | Benchmarking Comparison of Thermal and Diode Sensors for Pulsed Power Measurements | 9:40 AM-10:40 AM | S. Somasundaram Meena1, C. Baylis2, L. Dunleavy3, 1University of South Florida, Tampa, United States, 2Baylor University, Waco, United States, 3Modelithics, Inc, Tampa, United States |
(33) | A pulsed power system has been constructed to explore conditions under which accurate pulsed power measurements can be made with two different types of sensors. The system is set up to use both a thermal sensor and a diode sensor. For the thermal sensor, pulsed power is estimated from a simple calculation based on the average power of the pulsed RF signal. For the diode sensor gating is used to enable direct measurement of the pulsed power. | | |
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