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Session: WEP2D2:00 PM Wednesday, June 18, 2008 Room: Hall A3 |
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Session: WEP2D | Interactive Forum: |
Chair: | Daniela Staiculescu, Georgia Institute of Technology |
Co-Chair: | Ronglin Li, Georgia Institute of Technology |
| | WEP2D-01 | Intergate-Channel-Connected Multi-Gate PHEMT Devices for Antenna Switch Applications | 1093 | S. Koya1, T. Ogawa1, H. Takazawa1, A. Nakajima2, Y. Shigeno2, S. Osakabe2, S. Takatani1, 1Hitachi, Lts., Central Research Laboratory, Kokubunji-shi, Japan, 2Renesas Technology Corp., Takasaki-shi, Japan |
| Intergate-Channel-Connected Multi-gate Pseudomorphic High-Electron-Mobility Transistors (IGCC-PHEMT) for antenna switch of wireless communication terminals have been developed to improve their off-state distortions.A single-pole double throw (SPDT) switch with a IGCC-PHEMT is fabricated by using a standard 0.5 µm InGaAs PHEMT process.The 2nd and 3rd harmonic distortion of this switch are -88 dBc and -70 dBc, respectively, at a 30-dBm input power of 850 MHz, which are 7 and 8 dB lower than those with the same SPDT switch configuration and normal PHEMT | | |
WEP2D-02 | An Efficient Technique for Designing Balanced Vector Modulators with Low Insertion Loss | 1150 | Y. Hou, X. Sun, L. Li, Shanghai Institute of Microsystem and Information Technology, Shanghai, China |
| This paper describes and analyses an improved technique for the realization of balanced vector modulators. The analysis focuses on the effect of the Lange coupler characteristic impedance on the modulator minimum insertion loss. A method of adjusting the impedance to a calculated optimum value is used to reduce the loss and achieve a more symmetrical constellation. Based on this technique, a balanced vector modulator MMIC for millimeter-wave communication applications is fabricated on a 100μm thick GaAs substrate with 0.15μm pHEMT devices. This circuit is operating at 40GHz and has a chip size of 1.9×1.5mm2. The static constellation has been obtained with swept bias voltage control, and shows good agreement with the analysis. | | |
WEP2D-03 | A Monolithic, 1000 watt SPDT Switch | 1280 | T. E. Boles, J. Brogle, A. Rozbicki, TycoElectronics, Lowell, United States |
| A monolithic high power, high linearity, broadband, PIN diode switch capable of handling greater than 1000 watts of pulsed peak RF power has been designed and developed using a patented glass/silicon technology. This technology designated HMIC, Heterolithic Microwave Integrated Circuit, has been developed for various mixed signal and control circuit function applications ranging from HF through microwave frequencies. The unique design and fabrication techniques required for the needed improvements in thermal resistance and peak-to-peak voltage handling of this high power switch are discussed in detail. In addition, the results of this development effort in terms of standard switch parameters; insertion loss, isolation, return loss, and power handling are presented in the following paper. | | |
WEP2D-04 | A Low Phase-Shift Temperature Compensation Attenuator with Variable-Q FET Resonators | 1290 | M. Hangai1, H. Asao2, M. Hieda1, M. Yamaguchi3, M. Miyazaki1, 1Mitsubishi Electric Corporation, Kamakura, Japan, 2Mitsubishi Electric Corporation, Amagasaki, Japan, 3Mitsubishi Electric Corporation, Itami, Japan |
| A low phase-shift temperature compensation attenuator has been successfully developed. Our invented circuit utilizes new variable-Q FET resonators. By using this configuration, the dynamic range of the attenuation can be arbitrarily determined and the phase shift with temperature change can be reduced. To verify this methodology, we have fabricated an MMIC attenuator, and the circuit has achieved the attenuation dynamic range of 16.9dB, the phase shift of +/- 5.2deg, and the minimum insertion loss of 4.5dB in X-band over 75 degrees temperature variation. | | |
WEP2D-05 | A K-band AlGaN/GaN-based MMIC Amplifier with Microstrip Lines on Sapphire | 1347 | T. Murata1, M. Kuroda1, S. Nagai2, M. Nishijima1, H. Ishida1, M. Yanagihara1, T. Ueda1, H. Sakai1, T. Tanaka1, M. Li2, 1Matsushita Electric Industrial Co., Ltd., Nagaokakyo-shi, Japan, 2Panasonic Technologies Company, Cambridge, United States |
| We present a K-band AlGaN/GaN HFET MMIC amplifier with integrated microstrip lines on sapphire. The microstrip lines with via-holes through chemically stable sapphire are successfully formed for the first time by using a novel laser drilling technique. AlGaN/GaN HFETs with superlattice capping layers in the MMIC exhibit RF performance with fmax of 160GHz and NFmin of 2.5dB at 28GHz. The fabricated 3-stage MMIC amplifier exhibits a small-signal gain as high as 22dB at 26GHz with a 3dB bandwidth of 4GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems. | | |
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