Session: WEP1A

9:30 AM Wednesday, June 18, 2008

Room: Hall A3

     
Session: WEP1A
Interactive Forum:
Chair:
Daniela Staiculescu, Georgia Institute of Technology
Co-Chair:
Ronglin Li, Georgia Institute of Technology
 
 
WEP1A-01
Inkjet Printing of Passive Microwave Circuitry
1284
O. A. Azucena1, J. Kubby1, D. Scarbrough2, C. L. Goldsmith2, 1University of California, Santa Cruz, Santa Cruz, United States, 2MEMtronics Corporation, Plano, United States
 
Inkjet printing technology was utilized to fabricate transmission lines on a glass substrate. 50 micron resolution was realized using 10 pL drop volumes on a Corning 7740 glass substrate. This can be further improved by applying other methods as described in this paper. The conductivity of the sintered silver structures were 1/6 that of bulk silver after sintering at a temperature much lower than the melting point of bulk silver. A comparison of the DC resistance of the sintered silver shows that it can be a match for electroplated and etched copper. Printed Coplanar lines demonstrated losses of 1.62 dB/cm at 10 GHZ and 2.65 dB/cm at 20 GHz.
 
 
WEP1A-02
An Ultra-wideband Microstrip-to-CPW Transition
1704
Y. Kim, K. W. Kim, Y. Cho, Kyungpook National University, Daegu, Republic of Korea
 
A new design for an ultra-wideband microstrip-to-CPW (coplanar waveguide) transition is presented. The proposed transition provides the field and impedance matching between adjacent transmission lines by ground shaping. Clear design guidelines are provided to determine the ground shape and the transition length. As design examples, two transition designs for substrates with low (2.2) and high (10.2) dielectric constants are presented. The fabricated transitions in back-to-back configuration provide insertion loss less than 0.7 dB per transition and return loss better than 10 dB for frequencies from 7 GHz to over 40 GHz and from DC to over 20 GHz, respectively.
 
 
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