IEEE MTT-S 2008 International Microwave Symposium Technical Program

Session: WE3E	Frequency domain techniques
Chair:	Luca Perregrini, University of Pavia
Co-Chair:	Adalbert Beyer, Duisburg-Essen University
Abstract:	Three papers in this session deal with the problem of extracting equivalent parametric circuit models by means of full wave frequency domain techniques. These models can be useful for the optimization of complex structures by using standard circuit analysis techniques. Another paper will present a novel approach to setup absorbing boundary conditions in conjunction with the use of the method of moments. Finally, the last paper treats the evaluation response sensitivity in the FEM analysis of a component, when varying the port characteristics.

WE3E-01	A Derived Circuit Model for Spiral Inductors on Lossy Silicon Substrate
1143	K. Yang¹, H. Hu¹, K. L. Wu¹, W. Y. Yin², J. F. Mao², ¹The Chinese University of Hong Kong, Hong Kong, Hong Kong, ²Shanghai Jiao Tong University, Shanghai, China
	This paper presents a novel approach for deriving a physically meaningful circuit model for multilayered spiral inductors on lossy silicon substrates. The approach starts from a quasi-static Partial Element Equivalent Circuit (PEEC) model. The concept of complex inductance and capacitance is introduced to account for the conductor and dielectric losses. Basic Y-Δ network transformation is employed to “absorb” the insignificant internal nodes of the original PEEC network progressively. The physically meaningful circuit models of two practical inductors fabricated using 0.18μm CMOS process are derived to demonstrate the use of the approach for RFIC applications. Excellent agreement of the Q performances as well as the circuit responses of the derived circuit model with those from the measurements over the frequency range from 0.45 GHz to 10 GHz demonstrates the validity and the powerfulness of this new approach.

WE3E-02	Modeling of Losses in Substrate Integrated Waveguide by Boundary Integral-Resonant Mode Expansion Method
1512	M. Bozzi¹, L. Perregrini¹, K. Wu², ¹University of Pavia, Pavia, Italy, ²Ecole Polytechnique de Montreal, Montreal, Canada
	This paper presents an efficient technique for the evaluation of different types of losses in substrate integrated waveguide (SIW). This technique is based on the Boundary Integral-Resonant Mode Expansion (BI-RME) method in conjunction with a perturbation approach. This method also permits to derive automatically multimodal and parametric equivalent circuit models of SIW discontinuities, which can be adopted for an efficient design of complex SIW circuits. Moreover, a comparison of losses in different types of planar interconnects (SIW, microstrip, coplanar waveguide) is presented.

WE3E-03	Electromagnetic Macro-modeling of 3D High Density Trenched Silicon Capacitors for Wafer-Level-Packaging
1537	S. Wane¹, V. Muehlhaus², J. Rautio², ¹NXP-Semiconductors, Caen, France, ²Sonnet Software, Witten,, Germany
	In this paper a full-wave electromagnetic (EM) maco-modeling of 3D high-density trenched capacitors is proposed based on planar assumptions (Method of Moment technology). The resulting electromagnetic results are used to derive scalable wide-band Spice-compatible models synthesis easy to include in Physical Design Kit (PDK) libraries for frequency and time domain block-level and system-level simulations. Comparison of both obtained EM macro-model and wide-band extracted models synthesis with measurement data for various test case structures demonstrate satisfactory results for frequencies up 50GHz.

WE3E-04	A Novel Boundary Element Method with Surface Conductive Absorbers for 3-D Analysis of Nanophotonics
1294	L. Zhang¹, J. Lee¹, A. Farjadpour², J. K. White¹, S. G. Johnson², ¹Massachusetts Institute of Technology, Cambridge, United States, ²Massachusetts Institute of Technology, Cambridge, United States
	Fast integral equation solvers seem to be ideal approaches for simulating 3-D nanophotonic devices, as these devices generate fields both in an interior channel and in the infinite exterior domain. However, many devices of interest have channels that cannot be terminated without generating numerical reflections. Generating absorbers for these channels is a new problem for integral equation methods, as integral equation methods were initially developed for problems with finite surfaces. In this paper we show that the obvious approach for eliminating reflections, making the channel mildly conductive outside the domain of interest, is quite inaccurate. Instead, we propose a new method which uses a gradually varying surface conductivity to act as an absorber. Experiments are presented to demonstrate that this new method is orders of magnitude more effective than a volume absorber, and is easily incorporated in a fast integral equation solver.

WE3E-05	Sensitivity Analysis of S-parameters Including Port Variations Using the Transfinite Element Method
1538	L. Vardapetyan, J. Manges, Z. Cendes, Ansoft Corporation, Pittsburgh, United States
	Sensitivity analysis of microwave devices with respect to design parameters is presented. Ports are included in the computational domain via the Transfinite Element Method. The derivative of the system matrix is computed analytically. In particular, derivatives of the system matrix entries that depend on ports are obtained by analytical differentiation of the port eigenvalue problem. Numerical examples confirm the effectiveness of the proposed approach.

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