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Session: WE3B1:20 PM Wednesday, June 18, 2008 Room: A312 |
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Session: WE3B | Low Noise Devices and Circuits |
Chair: | Phil Smith, BAE Systems |
Co-Chair: | Marian Pospieszalski, NRAO |
Abstract: | This session presents exciting advances in a wide range of device and circuit technologies. We begin with state-of-the-art MMIC performance demonstrated at 180 GHz using 35nm InP HEMTs. Next, Q-band MHEMT LNAs with excellent broadband performance are presented. The following two papers address the low noise properties of devices over temperature. First, cyrogenic measurements and modeling of SiGe HBTs over the range of 15-300 degrees Kelvin are given. Second, the noise properties of GaN HEMTS at elevated temperatures are reported for the first time. The final paper of the session describes a DC-40 GHz active traveling wave power divider. |
| | WE3B-01 | Low Noise Amplifier for 180 GHz Frequency Band | 1638 | P. Kangaslahti1, D. Pukala1, T. Gaier1, W. Deal2, X. Mei2, R. Lai2, 1Jet Propulsion Laboratory, Pasadena, United States, 2Northrop Grumman Corporation, Redondo Beach, United States |
| Measurement of the humidity profile of the atmosphere is highly important for atmospheric science and weather forecasting. This sounding measurement is obtained at frequencies close to the resonance frequency of water molecules (183 GHz). We have designed and characterized a MMIC low noise amplifier that will increase the sensitivity of sounding instruments at these frequencies. This study demonstrated a factor of two improvement in MMIC LNA noise temperature at this frequency band. The measured packaged InP monolithic millimeter-wave integrated circuit (MMIC) amplifier had a noise temperature of NT=390 K (NF=3.7 dB). The circuit was fabricated in 35 nm InP high electron mobility transistor (HEMT) process. | | |
WE3B-02 | Q-band Low Noise Amplifiers Using a 0.15-μm MHEMT Process for Broadband Communication and Radio Astronomy Applications | 1236 | S. Weng1, C. Lin1, H. Chang1, C. Chiong2, 1National Central University, Jhongli, Taiwan, 2Academia Sinica, Taipei, Taiwan |
| Two Q-band low noise amplifiers using a 0.15-μm InGaAs MHEMT process for broadband communication and radio astronomy applications are presented in this paper. Between 37 and 53 GHz, the LNA1 features a small signal gain of higher than 31 dB, a noise figure of better than 3.5 dB with a minimum noise figure of 2.8 dB at 44 GHz, and a gain-bandwidth product (GBP) of 679 GHz. Between 32 and 50 GHz, the LNA2 features a small signal gain of higher than 28 dB, a noise figure of better than 3.2 dB with a minimum noise figure of 2.6 dB at 44 GHz, and a GBP of 569 GHz. The chip sizes of the LNA1 and LNA2 are both 21 mm2. The LNAs demonstrate broad bandwidth, high gain, low noise figure, and compact chip size, and they will be further applied to a few broadband receivers for communication and radio astronomy applications. Moreover, this work demonstrates the highest GBP among all the reported Q-band LNAs. | | |
WE3B-03 | Experimental Cryogenic Modeling and Noise of SiGe HBTs | 1565 | J. C. Bardin, S. Weinreb, California Institute of Technology, Pasadena, United States |
| SiGe devices are an exciting contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedure for extracting a simple equivalent circuit model capable of accurately describing SiGe HBT devices. Next, small-signal modeling results obtained for a 3x0.12x18um2 SiGe HBT at 15, 40, 77, 120, 200, and 300K are presented along with discussion of performance enhancements due to cooling of the device. Finally, the modeled noise performance is presented as a function of temperature and frequency using the concept of minimum cascaded noise temperature, a figure of merit which incorporates both noise temperature and gain. | | |
WE3B-04 | Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs | 1120 | M. Thorsell, K. Andersson, M. Fagerlind, M. Südow, P. Nilsson, N. Rorsman, Chalmers University of Technology, Göteborg, Sweden |
| The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the high-frequency noise performance of the AlGaN/GaN-HEMT.The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier. | | |
WE3B-05 | DC-TO-40GHz MMIC TRAVELING WAVE POWER SPLITTER FOR AIRBORNE SYSTEMS | 1220 | S. R. N'gongo1, Y. K. Varma2, P. Ratna2, V. Kirty2, 1J&R MICROWAVE SOLUTIONS Ltd, Toulouse, France, 2Astra Microelectronics Tech. Ltd, Hyderabad, India |
| A DC-to-40GHz traveling wave active power splitter has been designed to provide a high dynamic gain variation from -2dB to 12dB with 0.5dB gain flatness over the entire frequency band. The active power splitter can also operate as a conventional traveling wave low noise amplifier having a good NF when on of the arms is in the off-state condition or terminated by 50Ohm load. Our braodband active power splitter is suitable in the most multiple division receivers to fashion the logarithmic output power. | | |
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