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Session: WE1E8:00 AM Wednesday, June 18, 2008 Room: A315/316 |
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Session: WE1E | New Benchmarks in Power Amplifiers |
Chair: | James Schellenberg, Trex |
Co-Chair: | James Komiak, BAE Systems |
Abstract: | In this session high power amplifiers that have established new benchmarks in power, bandwidth, and efficiency are described. Gallium Nitride shows its emerging presence with 400 Watts at S-band and a second paper describes a broadband 10 Watt VHF to S-band PA. A third paper describes an internally matched 100 Watt device with a PAE of 50% at C-band. At X-band an internally matched HFET at 14 Watts has achieved 50% PAE. Finally, TWTAs are reported at K/Ka band with CW power of up to 200 Watts and 60% efficiency. |
| | WE1E-01 | Wideband 400 W Pulsed Power GaN HEMT Amplifiers | 1683 | K. Krishnamurthy, J. Martin, B. Landberg, R. Vetury, M. J. Poulton, RF Micro Devices, Charlotte, United States |
| We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 – 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100us pulse width obtains an output power in the range of 401 – 446 W over the band with a drain efficiency of 48 – 55%. The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm and advanced source connected field plates for high breakdown voltage. These wideband high power amplifiers are suitable for use in pulsed radar applications. | | |
WE1E-02 | A High Efficiency Broadband Monolithic Gallium Nitride Distributed Power Amplifier | 1427 | C. Xie1, J. Pavio1, D. A. Griffey2, A. Hanson3, S. Singhal3, 1Rockwell Collins, Inc, Scottsdale, United States, 2Rockwell Collins, Inc., Cedar Rapids, United States, 3Nitronex, Inc, Durham, United States |
| A 50-ohm 100-2200MHz distributed power amplifier (DPA) MMIC has been developed using Nitronex’s proprietary GaN-on-Si NRF1 process. The DPA MMIC exhibits -10dB minimum input/output return loss, 39.4dBm average output power, and a power added efficiencies of 30 to 66% over the entire bandwidth. | | |
WE1E-03 | Over 57% Efficiency C-band GaN HEMT High Power Amplifier with Internal Harmonic Manipulation Circuits | 1223 | H. Otsuka1, K. Yamanaka1, H. Noto1, Y. Tsuyama2, S. Chaki3, A. Inoue1, M. Miyazaki1, 1Mitsubishi Electric Corporation, Kamakura, Japan, 2Mitsubishi Electric Corporation, Amagasaki, Japan, 3Mitsubishi Electric Corporation, Itami, Japan |
| In this paper, a high efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits is presented. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd-harmonic frequencies. The developed GaN HEMT amplifier has achieved over 57% drain efficiency with 100W otput power at C-band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier at C-band to the best of our knowledge. | | |
WE1E-04 | X-Band 14W High Efficiency Internally-Matched HFET | 1322 | K. Mori, J. Nishihara, H. Utsumi, A. Inoue, M. Miyazaki, Mitsubishi Electric Corporation, Kamakura, Japan |
| An X-Band 14W high efficiency internally-matched HFET has been developed. In order to achieve high efficiency, not only equal combining characteristics but also equal load impedance for each unit FET cell are designed in the input and output matching circuits using EM simulator. In addition to the power splitting and combining characteristics, the large signal load impedance of each FET cell is discussed. The degradation of the efficiency by unequal operation of each FET cell and by mismatch to the optimum load impedance are suppressed within 1% and 2%, respectively in the design. The developed HFET has achieved a power-added efficiency (PAE) of 49.8% and an output power of 41.6dBm(14.5W) in X-band. | | |
WE1E-05 | High Power and Efficiency Space Traveling-Wave Tube Amplifiers with Reduced Size and Mass for NASA Missions | 1564 | R. N. Simons, J. D. Wilson, D. A. Force, NASA Glenn Research Center, Cleveland, United States |
| Recent advances in high power and efficiency space traveling wave tube amplifiers (TWTAs) for NASA's space-to-Earth communications are presented in this paper. The RF power and efficiency of a new K-Band amplifier is 40 Watts and 50% and that of a new Ka-Band amplifier is 200 Watts and 60%. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT has improved by a factor of ten over the previous generation Ka-Band devices. | | |
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