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Session: WE1D8:00 AM Wednesday, June 18, 2008 Room: A314 |
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Session: WE1D | Advances in Solid-State Millimeter-Wave Technology |
Chair: | Robert Weikle, University of Virginia |
Co-Chair: | Edward Niehenke, Niehenke Consulting |
Abstract: | Modern millimeter-wave radar, communications, and imaging systems demand high-performance solid-state circuitry. Moreover, a variety of different electronic material systems continue to have significant impact on active millimeter-wave devices. This session highlights recent advances in millimeter-wave active circuits that incorporate circuit techniques such as power combining, gain peaking, and integration, as well as different material technologies. |
| | WE1D-01 | A Q-Band MHEMT 100-mW MMIC Power Amplifier with 46 % Power-Added Efficiency | 1085 | E. C. Niehenke1, J. Whelehan1, D. Xu2, D. Meharry2, K. Duh 2, P. M. Smith2, 1JJW Consulting, Inc., Greeley, United States, 2BAE Systems, Nashua, United States |
| Q-band MMIC power amplifier has been designed, processed, and measured with first pass success. The MMIC design is based on the BAE Systems 0.1 um MHEMT device, which has high gain and excellent PAE. The two-stage amplifier uses a 2-finger, 75 um unit gate width, 0.1 um gate length MHEMT device for the first stage and two 4-finger, 75 um unit gate width, 0.1 um gate length MHEMT devices for the output stage. Complete stabilization for both the even and odd mode is provided using feedback and resistors in critical locations of the circuit. The first stage is optimized for gain while the output stage is optimized for power and power-added efficiency (PAE). The complete MMIC amplifier measures 3.5 mm x 1.7 mm complete with dc blocks and dc biasing elements. Measured performance includes record high PAE of 46 % at 44.5 GHz, 24 dB small-signal gain, 1 dB compressed power of 18 dBm, and 3-dB compressed power of 20.5 dBm across the 43.5 to 45.5 GHz frequency band. | | |
WE1D-02 | A ruggedly packaged D-Band GaAs Gunn diode with hot electron injection suitable for volume manufacture | 1470 | N. E. Farrington1, P. Norton2, M. Carr2, J. Sly1, M. Missous1, 1University of Manchester, Manchester, United Kingdom, 2e2v Technologies (UK) ltd., Lincoln, United Kingdom |
| GaAs Gunn diodes optimized for use in second harmonic mode at 125GHz have been fabricated with hot electron injection, based on a novel step-graded AlxGa(1-x)As launcher. Testing was performed after encapsulation in rugged, hermetically sealed packages using a similar process to that performed for volume manufacture of devices for the automotive industry. RF power levels up to 40mW at 121.5GHz in second harmonic mode have been obtained with an efficiency of 1.45% and an average frequency drift of 0.5MHz/ºC. Unlike the majority of state-of-the-art unpackaged devices reported in the literature which rely on diamond heatsinking, these packaged devices incorporate an integral gold heatsink, and so offer lower unit cost, increased manufacturability, and ease of integration into real-world systems. | | |
WE1D-03 | A 70-GHz transformer-peaking broadband amplifier in 0.13-um CMOS technology | 1003 | J. Jin, S. S. Hsu, National Tsing Hua University, Hsinchu, Taiwan |
| A 70-GHz broadband amplifier is realized in a 0.13-μm CMOS technology. By using five cascaded common-source stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB respectively under a power consumption (PDC) of 79.5 mW. With miniaturized transformer design, the core area of the circuit is only ~ 0.05 mm2. Compared with the state-of-the-art CMOS broadband amplifiers, this work achieves the highest gain-bandwidth product (GBW) of 231 GHz and also the highest GBW/PDC of 2.9 GHz/mW. | | |
WE1D-04 | W-Band SiGe LNA using Unilateral Gain Peaking | 1735 | J. Alvarado Jr.1, K. T. Kornegay3, B. P. Welch2, Y. W. Wang2, 1Raytheon Company, Tucson, United States, 2Cornell University, Ithaca, United States, 3Georgia Institute of Technology , Atlanta, United States |
| A 91 GHz low-noise amplifier (LNA) using a unilateral gain peaking design technique is presented. Parasitic capacitances from the layout of transistors are exploited in order to frequency shift the peak of Mason’s Unilateral Gain. This methodology enhances amplifier gain performance tremendously without additional power consumption or penalty in Noise Figure. The LNA was developed in IBM’s 8HP 0.12 μm, 200 GHz fT, SiGe technology. The measured results demonstrate a peak gain of 13 dB, an IIP3 of -5.4dBm, a Noise Figure of 5.1 dB with DC power consumption of only 8.1 mW at 91 GHz. The amplifier exhibits a 3-dB Gain Bandwidth of 16 GHz from 84 - 100 GHz with a minimum Gain of 10 dB and an average NF of only 5.5 dB. This device has the highest known reported figure of merit (28.9) for a silicon based W-Band LNA. | | |
WE1D-05 | InP HBT Millimeter-wave Power Amplifier Implemented using Planar Radial Power Combiner | 1603 | T. O'Sullivan1, M. Urteaga2, R. Pierson2, P. M. Asbeck1, 1University of California, San Diego, La Jolla, United States, 2Teledyne Scientific and Imaging, Thousand Oaks, United States |
| In this paper a millimeter-wave power amplifier implemented using a planar radial type power splitter and combiner is presented. The amplifier achieves an unsaturated output power of 23 dBm at 71 GHz with a corresponding P1dB of 20.8 dBm. The radial layout for the combiner allows 4 unit amplifiers to be combined in a single stage of power combining with a compact layout. The amplifier is implemented using an InP HBT process with ft/fmax values of 300/300 GHz. | | |
WE1D-06 | Low cost modular integrated horn antenna array using heterojunction barrier diode detectors | 1621 | H. Kazemi1, C. N. Nguyen1, B. Brar1, G. Rabeiz2, G. Nagy1, L. K. Tran1, A. C. Young3, E. R. Brown3, 1Teledyne Scientific and Imaging company, Thousand Oaks, United States, 2University of California-San Deigo (UCSD), San Diego, United States, 3University of California-Santa Barbara (UCSB), Santa Barbara, United States |
| Heterojunction barrier diode (HBD) detectors are introduced with optimized zero bias and room temperature performance at millimeter wave frequencies. They exhibit high dc responsivity of 17 A/W at zero bias with a low capacitance of 1.5 fF/um2. At 100 GHz they have been shown to have rf responsivities of 23000 V/W, recording the highest value to date. A modular 1x8 integrated horn array has been built using the most cost effective methods. Following the assembly of the array the antenna pattern and the noise equivalent delta temperature (NEDT) were measured. The lowest room temperature NEDT of 2.47 K has been measured for a direct detector at 30 Hz refresh rate showing an outstanding sensitivity to the millimeter wave radiation. | | |
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