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Session: TH4E3:30 PM Thursday, June 19, 2008 Room: A315/316 |
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Session: TH4E | Novel Monolithic Circuit Elements and IC Technology |
Chair: | Zaher Bardai, imn.epiphany |
Co-Chair: | Tsuneo Tokumitsu, Eudyna Devices |
Abstract: | This Session will cover advances in Monolithic Circuit Elements and Designs. The papers will include discussions in the areas of Nanoionics, SiGe-Transceivers, Monolithic Millimeter-wave Amplifiers, HEMT-HBT Technology integration as well as balanced active Inductor and an interesting realization of a Low Temperature variable Inductor in porous anodic alumina. |
| | TH4E-01 | A Novel Nanoionics-based Switch for Microwave Applications | 1497 | J. A. Nessel1, R. Q. Lee1, C. H. Mueller2, M. N. Kozicki3, M. Ren3, J. Morse3, 1NASA Glenn Research Center, Cleveland, United States, 2Analex Corporation, Cleveland, United States, 3Arizona State University, Tempe, United States |
| This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic “bridge” to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of ~0.5dB, isolation of 30dB, low voltage operation (1V), low power (~μW) and low energy (~nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits. | | |
TH4E-02 | Low Temperature Variable Inductor Using Porous Anodic Alumina | 1737 | T. B. Oogarah, M. Daneshmand, S. Chang, R. Mansour, University of Waterloo, Waterloo, Canada |
| We propose a novel RF MEMS tunable inductor that is fabricated at a very low temperature of 80°C making this an excellent candidate for integration with RF ICs. The inductor is made of trilayer of Aluminium-Porous Anodic Alumina (PAA)-Aluminium that can be thermally actuated and tuned. The measured wide tuning range of 25% is achieved for the inductor variation of 6.1nH to 7.8nH at 2GHz. PAA is a novel low cost and low temperature dielectric material that can be easily tuned and integrated with RFIC or MEMS process. To our knowledge, this is the first time this material has been proposed and successfully used as a structural material for MEMS devices and CMOS processes. | | |
TH4E-03 | High Quality-Factor and Inductance of Symmetric Differential-Pair Structure Active Inductor Using a Feedback Resistance Design | 1646 | K. Hwang1, C. Cho1, J. Lee1, J. Kim2, 1Korea Aerospace Universty, Goyang, Republic of Korea, 2Yonsei University, Seodaemun-gu, Republic of Korea |
| This paper proposes a new symmetric differential-pair structure for the active inductor. The CMOS spiral inductor occupies a large chip size and is difficult to obtain a high Q-factor. A symmetric differential-pair active inductor circuit topology with feedback resistor is proposed, which can substantially improve its equivalent inductance and quality-factor. This feedback resistance differential-pair active inductor was implemented by using 0.18-um TSMC RF CMOS technology, which demonstrates a maximum quality-factor of 28 with a 27-nH inductance. The proposed active inductor has one hundredth of chip size of a spiral inductor and it also shows more than ten times wide dynamic range and twice higher Q-factor compared to the conventional 1-port active inductor circuits. In addition, this configuration can be easily implemented using the series circuit. | | |
TH4E-04 | Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs | 1630 | R. Santhakumar, Y. Pei, U. K. Mishra, R. A. York, University of California at Santa Barbara, Santa Barbara, United States |
| Two monolithic broadband distributed amplifiers have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit cell and shows a measured S21 of 5.2±1dB from 1-50GHz. The second distributed amplifier uses dual-gate HEMTs for the unit cell and achieves a measured S21 of 12±1dB from 2-32GHz. The process consists of 200nm gate-length HEMTs, CPW transmission lines, MIM capacitors and thin-film resistors. The dual-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. | | |
TH4E-05 | A Mixed HEMT-HBT MMIC Technology using MBE Regrowth | 1695 | E. T. Kunkee1, S. Consolazio2, J. Barner2, T. Retelny2, G. Dietz2, E. Bogus2, A. Cavus1, J. Chen1, J. Uyeda1, R. Hsing1, P. Chin1, A. Ahkiyat2, D. Chua2, R. Clark2, R. Haubenstricker2, M. Johnson2, T. Nguyen2, P. Sahm2, E. Zeliasz2, R. Lai1, 1Northrop Grumman Corporation, Manhattan Beach, United States, 2Northrop Grumman Corporation, Rolling Meadows, United States |
| Current microwave systems are constructed by integrating a large number of single technology components into a final product due to the limitations of any single transistor technology across all functions and metrics, thereby increasing cost and size of a given system. In this paper, we present a fabrication process using Molecular Beam Epitaxy (MBE) regrowth which allows the combination of High Electron Mobility Transistors (HEMT) with Heterostructure Bipolar Transistors (HBT) on a single GaAs chip without compromising the performance of either the HBT or HEMT. HBT fT/Fmax of 40/85 GHz and Beta of 170 for a collector current of 1mA; and HEMT fT/Fmax of 115/160 GHz with a gm-peak of 755 mS/mm has been achieved. Circuit performance demonstrates the potential of performance advances over HEMT-only circuit embodiments. | | |
TH4E-06 | ASK and Pi/4-QPSK Dual Mode SiGe-MMIC Transceiver for 5.8GHz DSRC Terminals having Stabilized Amplifier Chain | 1209 | S. Shinjo1, K. Tsutsumi1, K. Mori1, H. Okada2, M. Inoue3, N. Suematsu1, 1Mitsubishi Electric Corporation, Kamakura, Japan, 2Mitsubishi Electric Corporation, Himeji, Japan, 3Mitsubishi Electric Engineering Corporation, Himeji, Japan |
| A high integrated SiGe-MMIC transceiver having VCO, PLL, dual-Tx block and common receiver block is developed for 5.8GHz DSRC terminals. To obtain stability of transceiver using differential configuration, the stabilized MMIC design method based on the loop analysis is introduced to it. In the loop analysis, the both on-chip closed loop of differential mode and common mode are considered, and the loop gain for each loops are simulated. The loop-simulations and measurements show that the design method is effective for realization of stabilized MMIC. The developed SIGe-MMIC transceiver having the stabilized amplifier chain is fabricated in 0.35um SiGe-BiCMOS, and it achives the good modulation performances. | | |
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